IRFML8244TRPBF hexfet power mosfet application(s) micro3 tm (sot-23) IRFML8244TRPBF ?? load/ system switch features and benefits v ds 25 v v gs max 20 v r ds(on) max (@v gs = 10v) 24 m ? r ds(on) max (@v gs = 4.5v) 41 m ? features benefits low r ds(on) ( ? 24m ? ) lower switching losses industry-standard pinout multi-vendor compatibility compatible with existing surface mount techniques results in easier manufacturing rohs compliant containing no lead, no bromide and no halogen ? environmentally friendly msl1, consumer qualification increased reliability absolute maximum ratings symbol parameter units v ds drain-source voltage v i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c maximum power dissipation p d @t a = 70c maximum power dissipation linear derating factor w/c v gs gate-to-source voltage v t j, t stg junction and storage temperature range c thermal resistance symbol parameter typ. max. units r ? ja junction-to-ambient ??? 100 r ? ja junction-to-ambient (t<10s) ??? 99 1.25 0.80 24 w c/w a max. 5.8 4.6 -55 to + 150 20 0.01 25 product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
d s g electric characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 25 ??? ??? v ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.02 ??? v/c ??? 20 24 ??? 32 41 v gs(th) gate threshold voltage 1.35 1.7 2.35 v i dss ??? ??? 1.0 ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 r g internal gate resistance ??? 1.6 ??? ? gfs forward transconductance 10 ??? ??? s q g total gate charge ??? 5.4 ??? q gs gate-to-source charge ??? 1.0 ??? q gd gate-to-drain ("miller") charge ??? 0.81 ??? t d(on) turn-on delay time ??? 2.7 ??? t r rise time ??? 2.1 ??? t d(off) turn-off delay time ??? 9.0 ??? t f fall time ??? 2.9 ??? c iss input capacitance ??? 430 ??? c oss output capacitance ??? 110 ??? c rss reverse transfer capacitance ??? 49 ??? source - drain ratings and characteristics symbol parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.2 v t rr reverse recovery time ??? 11 17 ns q rr reverse recovery charge ??? 4.2 6.3 nc di/dt = 100a/ s v gs = 20v v gs = -20v t j = 25c, i s = 5.8a, v gs = 0v integral reverse p-n junction diode. v ds = 10v, i d = 5.8a i d = 5.8a i d = 1.0a t j = 25c, v r = 20v, i f =5.8a showing the v ds =13v conditions v gs = 10v v gs = 0v v ds = 10v ? = 1.0mhz r g = 6.8 ? v gs = 10v conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma mosfet symbol v ds = v gs , i d = 10 a v ds = 20v, v gs = 0v v ds = 20v, v gs = 0v, t j = 125c drain-to-source leakage current a v dd =13v na nc ns pf a 1.25 24 ??? ??? ??? ??? r ds(on) static drain-to-source on-resistance m ? v gs = 10v, i d = 5.8a v gs = 4.5v, i d = 4.6a IRFML8244TRPBF product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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